View XR1001_1338139.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

33.0-40.0 GHz GaAs MMIC Receiver
May 2005 - Rev 13-May-05
Features
Sub-Harmonic Receiver 9.0 dB Conversion Gain 4.0 dB Noise Figure 12.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
R1001
R1001
General Description
Mimix Broadband's 33.0-40.0 GHz GaAs MMIC receiver has a small signal conversion gain of 9.0 dB with a noise figure of 4.0 dB and 12.0 dB image rejection across the band. The device is a two stage LNA followed by a pair of sub-harmonic mixers, configured to form an image reject mixer which requires an LO at 15.5-21.5 GHz. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-toPoint Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+6.0 VDC 70 mA +0.3 VDC 0 dBm -65 to +165 OC -55 to MTTF Table3 MTTF Table 3
(3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Input Return Loss RF (S11) Small Signal Conversion Gain RF/IF (S21) (USB/LSB) 2 LO Input Drive (PLO) Image Rejection (USB/LSB) 2 Noise Figure (NF) Isolation LO/RF @ LOX2 Input Power for 1 dB Compression (P1dB) 1 Drain Bias Voltage (Vd) Gate Bias Voltage (Vg) Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
(1) Measured using constant current. (2) Min/Max limits over 33.0-39.5 GHz
Page 1 of 8
Units GHz GHz GHz GHz dB dB dBm dBc dB dB dBm VDC VDC mA
Min. 34.0 33.0 15.5 DC 3.0/3.0 +10.0 10.0/6.0 -1.0 -
Typ. 18.0 9.0/9.0 +12.0
14.0/12.0
4.0 45.0 -13.0 +3.0 -0.5 30
Max. 40.0 40.0 21.5 3.0 +14.0 +5.5 0.0 60
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC Receiver
May 2005 - Rev 13-May-05
R1001
Receiver Measurements
XR1001 Vd=3.0 V, Id=30 mA, USB LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~560 Devices
14
XR1001 Vd=3.0 V, Id=30 mA, LSB LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~560 Devices
14
Conversion Gain (dB)
Conversion Gain (dB)
12 10 8 6 4 2 0 35 36 37 38 RF Frequency (GHz) Max Median Mean -3sigma 39 40 41
12 10 8 6 4 2 0 35 36 37 38 RF Frequency (GHz) Max Median Mean -3sigma 39 40 41
XR1001 Vd=3.0 V, Id=30 mA, USB LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~560 Devices
0 -2 0 -2
XR1001 Vd=3.0 V, Id=30 mA, LSB LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~560 Devices
Image Rejection (dBc)
Image Rejection (dBc)
-4 -6 -8
-4 -6 -8
-10 -12 -14 -16 -18 -20 35 36 37 38 Frequency (GHz) +3sigma Max Median Mean -3sigma 39 40 41
-10 -12 -14 -16 -18 -20 35 36 37 38 RF Frequency (GHz) Max Median Mean -3sigma 39 40 41
XR1001 Vd=3.0 V Id=30 mA
RF Return Loss (dB) 0 Noise Figure (dB) -5 -10 -15 -20 -25 -30 36.0 36.5 37.0 37.5 38.0 38.5 39.0 39.5 40.0 5.00 4.00 3.00 2.00 1.00 0.00 36.0 36.5
XR1001 Vd=3.0 V Id=30 mA
37.0
37.7
38.0
38.5
39.0
39.5
40.0
Frequency (GHz)
Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC Receiver
May 2005 - Rev 13-May-05
R1001
Receiver Measurements (cont.)
XR1001 Vd=3.0 V, Id=30 mA, USB LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 30.5 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 30.5
XR1001 Vd=3.0 V, Id=30 mA, LSB LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
Conversion Gain (dB)
Conversion Gain (dB)
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
RF Frequency (GHz) Max Median Mean -3sigma Max
RF Frequency (GHz) Median Mean -3sigma
XR1001 Vd=3.0 V, Id=30 mA, USB LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
0
Image Rejection (dBc)
XR1001 Vd=3.0 V, Id=30 mA, LSB LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
0
Image Rejection (dBc)
-5
-5
-10
-10
-15
-15
-20
-20
-25 30.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
-25 30.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
RF Frequency (GHz) Max Median Mean -3sigma Max
RF Frequency (GHz) Median Mean -3sigma
XR1001 Vd=3.0 V, Id=30 mA, USB/LSB LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
0
RF Return Loss (dB)
-5
-10
-15
-20
-25 30.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
RF Frequency (GHz) Max Median Mean -3sigma
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC Receiver
May 2005 - Rev 13-May-05
R1001
0.541 (0.021)
2
Mechanical Drawing
2.500 (0.099)
1.143 (0.045)
3
R1001
1.285 (0.051)
1
4
0.315 (0.012)
0.0 0.0
6
5
0.541 (0.021)
1.143 (0.045)
2.900 (0.114)
(Note: Engineering designator is 38REC_01B2) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.500 mg. Bond Pad #1 (RF) Bond Pad #2 (IF2) Bond Pad #3 (IF1) Bond Pad #4 (LO) Bond Pad #5 (Vd) Bond Pad #6 (Vg) Bypass Capacitors - See App Note [2]
Bias Arrangement
IF2
2
IF1
3
IF2
IF1
R1001
RF
1
RF LO
4 6 5
LO
Vg
Vd
Vg
Vd
Page 4 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC Receiver
May 2005 - Rev 13-May-05
R1001
App Note [1] Biasing - As shown in the bonding diagram, this device is operated with both stages in parallel, and can be biased for low noise performance or high power performance. Low noise bias is nominally Vd=3V, Id=30mA and is the recommended bias condition. Power bias may be as high as Vd=5.5V, Id=60mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
Note: RF and IF ports are AC coupled (DC blocks on chip), LO port is DC coupled (no DC block on chip.)
MTTF Tables
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius
Channel Temperature 84 deg Celsius 104 deg Celsius 124 deg Celsius
Rth
MTTF Hours
FITs
318.0 C/W -
7.63E+11 4.79E+10 3.95E+09
1.31E-03 2.09E-02 2.53E-01
Bias Conditions: Vd=3.0V, Id=30 mA
Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius
Channel Temperature 159 deg Celsius 179 deg Celsius 199 deg Celsius
Rth
MTTF Hours
FITs
314.8 C/W -
1.39E+08 2.09E+07 3.67E+06
7.18E+00 4.79E+01 2.72E+02
Bias Conditions: Vd=5.5V, Id=60 mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC Receiver
May 2005 - Rev 13-May-05
R1001
App Note [3] USB/LSB Selection -
LSB
USB
For Upper Side Band operation (USB): With IF1 and IF2 connected to the direct port (0) and coupled port (90) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms.
IF2
IF1
For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0) and coupled port (90) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms.
An alternate method of Selection of USB or LSB:
USB
LSB
In Phase Combiner
In Phase Combiner
-90o -90
o
IF2
IF1
IF2
IF1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC Receiver
May 2005 - Rev 13-May-05
R1001
Typical Application
XR1001 BPF RF IN 37.0-39.5 GHz LNA IR Mixer Coupler
IF Out 2 GHz
AGC Control
LO(+12dBm) 17.5-18.75 GHz (USB Operation) 19.5-20.75 GHz (LSB Operation)
Mimix Broadband MMIC-based 33.0-40.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 40 GHz)
Also See: Multiplier selection guide at www.mimixbroadband.com for multipliers that can be used to drive the XR1001.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC Receiver
May 2005 - Rev 13-May-05
R1001
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C + 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.

▲Up To Search▲

Price & Availability of XR1001

	To Download XR1001 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .